Kim Ki-nam, President of Samsung Electronics’ Semiconductor Business
Samsung Electronics Co. announced that it will commercialize next-generation random access memory (RAM) chips that are up to 100,000 times faster than existing chips by next year.
The world’s largest memory chipmaker on Wednesday showcased the magnetoresistive RAM (MRAM) chip technology at the Samsung Foundry Forum held in Santa Clara, California and said it aims to complete the development of its processing technology this year to mass-produce the chips from next year.
The new MRAM chip will be able to store significantly more data and process faster than currently available chips. At the forum, Samsung Electronics said it will produce chips using 4-nano low power plus (4LPP) semiconductor foundry process by 2020 and 8-nano LPP that is necessary to produce MRAM chips this year, becoming the first in the global semiconductor industry to pave the way in the next-generation chips.
The firm also unveiled comprehensive foundry process technologies across small to bigger nodes, a move to appeal to its customers that it is capable of designing and manufacturing faster and more power-efficient chips. It earlier this month separated its foundry business into a new unit.
Shares of Samsung Electronics on Friday inched up 0.88 percent to 2,304,000 won from the previous session.
By Kim Dong-eun and Lee Dong-in
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